?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com FDH45N50F rev. a FDH45N50F 500v n-channel mosfet, frfet january 2006 unifet tm fdh45n50 f 500v n-channel mosfet, frfet features ? 45a, 500v, r ds(on) = 0.12 ? @v gs = 10 v ? low gate charge ( typical 105 nc) ?low c rss ( typical 62 pf) ?fast switching ? 100% avalanche tested ? improved dv/dt capability description these n-channel enhancement mode power field effect transis - tors are produced using fairchil d?s proprietary, planar stripe, dmos technology. this advanced technology has be en especially tailored to mini - mize on-state resistance, prov ide superior switching perfor - mance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high effi - cient switched mode power suppl ies and active power factor correction. g s d to-247 fdh series d g s absolute maximum ratings symbol parameter FDH45N50F unit v dss drain-source voltage 500 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 45 28.4 a a i dm drain current - pulsed (note 1) 180 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 1868 mj i ar avalanche current (note 1) 45 a e ar repetitive avalanche energy (note 1) 62.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 625 5 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c thermal characteristics symbol parameter min. max. unit r jc thermal resistance, junction-to-case -- 0.2 c/w r cs thermal resistance, case-to-sink 0.24 -- c/w r ja thermal resistance, junction-to-ambient -- 40 c/w
2 www.fairchildsemi.com FDH45N50F rev. a FDH45N50F 500v n-channel mosfet, frfet package marking and ordering information device marking device package reel size tape width quantity FDH45N50F FDH45N50F to-247 - - 30 electrical characteristics t c = 25c unless otherwise noted symbol parameter conditions min. typ. max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 a 500 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c -- 0.5 -- v/ c i dss zero gate voltage drain current v ds = 500v, v gs = 0v v ds = 400v, t c = 125 c -- -- -- -- 25 250 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 22.5a -- 0.105 0.12 ? g fs forward transconductance v ds = 40v, i d = 22.5a (note 4) -- 49.0 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 5100 6630 pf c oss output capacitance -- 790 1030 pf c rss reverse transfer capacitance -- 62 -- pf c oss output capacitance v ds = 400v, v gs = 0v, f = 1.0mhz -- 161 -- pf c oss eff. effective output capacitance v ds = 0v to 400v, v gs = 0v -- 342 -- pf switching characteristics t d(on) turn-on delay time v dd = 250v, i d = 48a r g = 25 ? (note 4, 5) -- 140 290 ns t r turn-on rise time -- 500 1010 ns t d(off) turn-off delay time -- 215 440 ns t f turn-off fall time -- 245 500 ns q g total gate charge v ds = 400v, i d = 48a v gs = 10v (note 4, 5) -- 105 137 nc q gs gate-source charge -- 33 -- nc q gd gate-drain charge -- 45 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 45 a i sm maximum pulsed drain-source diode forward current -- -- 180 a v sd drain-source diode forward voltage v gs = 0v, i s = 45a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 45a di f /dt =100a/ s (note 4) -- 188 -- ns q rr reverse recovery charge -- 0.64 -- c notes: 1. repetitive rating: pulse width limit ed by maximum junction temperature 2. l = 1.46mh, i as = 48a, v dd = 50v, r g = 25 ? , starting t j = 25 c 3. i sd 45a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics
3 www.fairchildsemi.com FDH45N50F rev. a FDH45N50F 500v n-channel mosfet, frfet typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] 2 4 6 8 10 12 10 0 10 1 10 2 150 o c 25 o c -55 o c notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariation vs. s ource current and temperatue 0 20 40 60 80 100 120 140 160 0.00 0.05 0.10 0.15 0.20 0.25 0.30 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 0 10 1 10 2 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] figure 5. capacitance characteristics figure 6. gate charge characteristics 0 20406080100120 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v note : i d = 48a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 2000 4000 6000 8000 10000 12000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v]
4 www.fairchildsemi.com FDH45N50F rev. a FDH45N50F 500v n-channel mosfet, frfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 notes : 1. v gs = 10 v 2. i d = 22.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature 25 50 75 100 125 150 0 10 20 30 40 50 i d , drain current [a] t c , case temperature [ o c] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] figure 11. typical drain current slope fi gure 12. typical drain-source voltage vs. gate resistance slope vs. gate resistance 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 45 notes : 1. v ds = 400 v 2. v gs = 12 v 3. i d = 25a 4. t j = 125 o c dv/dt(off) dv/dt(on) dv/dt [v/ns] r g , gate resistance [ ? ] 0 5 10 15 20 25 30 35 40 45 50 0 500 1,000 1,500 2,000 2,500 3,000 3,500 4,000 notes : 1. v ds = 400 v 2. v gs = 12 v 3. i d = 25a 4. t j = 125 o c di/dt(off) di/dt(on) di/dt [a/ s] r g , gate resistance [ ? ]
5 www.fairchildsemi.com FDH45N50F rev. a FDH45N50F 500v n-channel mosfet, frfet typical performance characteristics (continued) figure 13. typical switching losses vs. figure 14. unclamped inductive switching gate resistance capability 0 5 10 15 20 25 30 35 40 45 50 0 200 400 600 800 1,000 notes : 1. v ds = 400 v 2. v gs = 12 v 3. i d = 25a 4. t j = 125 o c eoff eon energy [ j] r g , gate resistance [ ? ] 0.01 0.1 1 10 100 1 10 100 starting t j = 150 o c notes : 1. if r = 0 ? t av = (l)(i as )/(1.3 rated bv dss - v dd ) 2. if r 0 ? t av = (l/r)in[(i as x r)/(1.3 rated bv dss - v dd )+1] starting t j = 25 o c i as , avalanche current [a] t av , time in avalanche [ms] figure 15. transient thermal resistance curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -3 10 -2 10 -1 notes : 1. z jc (t) = 0.2 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square wave pulse duration [sec] t 1 p dm t 2
6 www.fairchildsemi.com FDH45N50F rev. a FDH45N50F 500v n-channel mosfet, frfet mechanical dimensions to-247ad (fks pkg code 001) dimensions in millimeters
7 www.fairchildsemi.com FDH45N50F rev. a FDH45N50F 500v n-channel mosfet, frfet trademarks the following are registered and unregistered trademarks fair child semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to m ake changes without furt her notice to any products herein to improve reliability, functi on or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or sy stems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? scalarpump? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? unifet? vcx? wire? across the board. around the world.? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. i17
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